Part Number Hot Search : 
C546B RT8243A 24LC02 27000 C546B 100S3 PG1335 XF20062C
Product Description
Full Text Search
 

To Download UT20N03G-K08-5060-R Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  unisonic technologies co., ltd ut20n03 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2015 unisonic technologies co., ltd qw-r502-139.d n-channel enhancement mode ? features * r ds(on) < 20m ? @ v gs =10v, i d =15a * low capacitance * optimized gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 6 7 8 ut20n03l-tn3-r ut20n03g-tn3-r to-252 g d s - - - - - tape reel - UT20N03G-K08-5060-R dfn-8(56) s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source ? marking to-252 dfn-8(56)
ut20n03 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-139.d ? pin configuration dfn-8(56)
ut20n03 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-139.d ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 20 a pulsed drain current (note 1) i dm 120 avalanche energy single pulsed (note 2) e as 15 mj repetitive (note 1) e ar 6 peak diode recovery (note 3) dv/dt 6 kv/ s power dissipation to-252 p d 60 w dfn-8(56) 21 w junction temperature t j +175 c storage temperature t stg -55 ~ +175 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol min typ max unit junction to ambient to-252 ja 100 c/w dfn-8(56) 46 junction to case to-252 jc 1.7 2.5 c/w dfn-8(56) 6
ut20n03 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-139.d ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250a 30 v drain-source leakage current i dss v ds =30v,v gs =0v 1 a gate-source leakage current i gss v ds =0 v, v gs = 20v 100 na on characteristics gate-threshold voltage v gs ( th ) v ds =v gs , i d =25 a 1.2 1.6 2 v drain-source on-state resistance r ds(on) v gs =4.5v, i d =15a 22.9 31 m ? v gs =10v, i d =15a 15.5 20 dynamic characteristics input capacitance c iss v ds =25 v, v gs =0v, f=1mhz 530 700 pf output capacitance c oss 200 275 reverse transfer capacitance c rss 60 90 switching characteristics turn-on delay time t d ( on ) v gs =10v,v dd =15v, r g =12.7 ? , i d =15a 6.2 9.3 ns turn-on rise time t r 11 17 turn-off delay time t d ( off ) 23 24 turn-off fall-time t f 18 27 gate-source charge q gs v dd =15v,i d =15a 2.5 3.1 nc gate-drain charge q gd 6.4 9.6 gate charge total q g v dd =15v,i d =15a, v gs =0~5v 8.4 11 source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs =0v,i f =30a 1.1 1.4 v maximum continuous drain-source diode forward current i s 30 a maximum pulsed drain-source diode forward current i sm 120 reverse recovery time t rr v r =15v,i f =i s , di f /dt=100a/ s 15 18 ns reverse recovery charge q rr 2 3 nc notes: 1. repetitive rating : pulse widt h limited by maximum junction temperature 2. i d = 15a, v dd = 25v, r g = 25 ? , starting t j = 25c 3. i s =30a, v ds =24v, di/dt=200a/ s, t j(max) =175c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature
ut20n03 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-139.d ? typical characteristics r ds(on) =v ds /i d continuous drain current, i d (a) z thjc (k/w) r ds(on) (m ) continuous drain current, i d (a) gate charge 16 14 12 10 6 8 4 2 0 24 0 6 8 1012 14 16182021 gate charge, q g (nc) v gs =f(q gate ) i d =15a pulse 0.2 v ds max 0.5 v ds max 0.8 v ds max i d =f(v gs ) v ds 2i d r ds(on)max t p =80 s 60 55 50 45 40 35 30 25 20 10 15 5 0 01 2 3 4 55.5 gate-source voltage, v gs (v) transfer characteristics
ut20n03 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-139.d ? typical characteristics(cont.) c (pf) i f (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


▲Up To Search▲   

 
Price & Availability of UT20N03G-K08-5060-R

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X